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This paper reports on the successful demonstration of radio frequency (RF) components in support of an integrated wide band/high dynamic range X-band receiver in 180-nm fully-depleted (FD) SOI CMOS technology. The demonstrated microwave monolithic integrated circuit (MMIC) includes an X-band low noise amplifier (LNA), Marchand balun, balanced amplifiers, double balanced mixer, non-reflective filter,...
This paper describes a wide band/high dynamic range receiver implemented in a 0.18-μm fully-depleted silicon-on-insulator (FDSOI) CMOS technology. The system demonstration is a single conversion architecture with RF input at X-Band and IF output at S-Band. The receiver yielded 20–21.5 dB conversion gain, 5.6–6 dB noise figure, and 16.7 dBm OIP3 across a 600-MHz instantaneous bandwidth at S-Band operation.
This paper presents a large-signal envelope-tracking (ET) polar transmitter (TX) system with a monolithic cascode SiGe power amplifier (PA) for mobile WiMAX applications. The envelope amplifiers are designed in the TSMC 0.35μm SiGe BiCMOS technology and also with discrete components for comparisons. The entire polar TX system using the discrete envelope amplifier in measurement achieves the power-added...
The characteristics of silicon on insulator MOSFETs are modified to enhance the RF performance by varying channel implants. Without adding new masks or fabrication steps to the standard CMOS process, this approach can be easily applied in standard foundry fabrication. The transconductance, output resistance, and breakdown voltage can be increased by eliminating channel and drain extension implants...
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