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High-performance Si thin-film transistors (TFTs) on the recessed-channel Si strips with the under-layered nitride film have been fabricated using excimer laser crystallization (ELC). A nitride film was added as a light absorption layer to suppress solidification along the edge of the Si strip. Thus, only one primary grain boundary perpendicular to the Si strip formed in the middle of the recessed...
The gadolinium oxide nanocrystal (Gd2O3-NCs) memory has been demonstrated with large memory window and good reliabilities. It has been proven that the charges are stored in the crystallized Gd2O3-NCs which are surrounded by trapping-free amorphous phase of Gd2O3 film. The calculated deep trapping energy level is about 1.7eV below the conduction of the Gd2O3-NCs, and the energy band diagram of the...
This work presents a flexible carbon based memory with the Al/graphene oxide (GO)/ITO structure fabricated at room temperature. The Al/GO/ITO devices show the unipolar resistive switching behavior with the resistance ratio to over 30, and sustain over 250 cycling without any resistance window closure. However, the retention fails due to the resistance increase of low resistance state (LRS). The mechanisms...
The low cost and high absorbance is the two most important considerations for thin-film silicon photovoltaics. In this work, aluminum doped zinc oxide(AZO) nanowire is grown by low cost hydrothermal method and nano-structured amorphous silicon(α-Si) solar cell is realized on these AZO nanowire substrate. The experimental result shows superior light trapping property compared to conventional planar...
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