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Top-gate(TG) field effect transistors (FETs) with channels composed of Si nanowires were successfully fabricated in this study using photolithographic processes. In the TG FETs fabricated on oxidized Si substrates, the channels composed of Si nanowires with diameters of about 100 nm with natural SiO2. The surfaces of the Si nanowires with natural SiO2 were covered with the gate metal to form TG FETs.
CVD TiN using TiCl/sub 4/ and NH/sub 3/ chemistry has been implemented successfully in cylindrically shaped Ta/sub 2/O/sub 5/ storage capacitor as a barrier layer in poly-Si/TiN double upper electrode. Electrical characteristics of Ta/sub 2/O/sub 3/ capacitor with CVD TiN double electrode were superior to that with PVD TiN and it was attributed to nearly 100% conformality of CVD TiN. However, it was...
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