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A noble Al precursor of methylpyrooridine alane (MPA) showed excellent stabilities and lifetime compared to any other Al precursor. The preferential Metal Deposition (PMD)-Al, which used a CVD-Al process with MPA, showed excellent contact fill and electrical properties, which implied that PMD-Al using MPA can be applied to a ULSI DRAM metallization process, such as metal contact and via holes.
We have developed tungsten nitride (W-Nitride) films grown by plasma enhanced chemical vapor deposition (PECVD) for barrier material applications in ultra large scale integration DRAM devices. As-deposited W-Nitride films show an amorphous structure, which transforms into crystalline, β-W2N and α-W phases upon annealing at 800°C. The resistivity of the as-deposited films grown at the NH3/WF6 gas flow...
CVD TiN using TiCl/sub 4/ and NH/sub 3/ chemistry has been implemented successfully in cylindrically shaped Ta/sub 2/O/sub 5/ storage capacitor as a barrier layer in poly-Si/TiN double upper electrode. Electrical characteristics of Ta/sub 2/O/sub 3/ capacitor with CVD TiN double electrode were superior to that with PVD TiN and it was attributed to nearly 100% conformality of CVD TiN. However, it was...
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