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Concurrent dual-band switch-mode power amplifiers require high common-mode impedance at their intermodulation frequencies. Baluns utilizing quarter-wave effects only have perfect open common-mode impedance at their design frequency. Attempting to use a balun without taking the new dual-band requirements for common-mode impedance into account will result in efficiency loss. However, the addition of...
In this paper, a comparison between the concurrent multi-band and parallel single-band power amplifier architectures is analyzed. A generalized framework in which these two architectures can be compared in terms of cost, drain efficiency, output power, and linearity is developed. Results show that in general, a concurrent multi-band power amplifier will have worse performance than a parallel single-band...
This paper presents two different switchless (concurrent) dual-band load networks for class E power amplifier at 800 MHz and 1.9 GHz for 4G LTE standards. The two presented load structures, the all-lumped element and the transformer-based structure not only provide optimal impedance at both fundamental frequencies but also present high impedance up to their 3rd harmonics. Simulated PAEs for the all-lumped...
The premise of GaN HEMT devices to offer superior power amplification performance in microwave frequencies lead to an extensive research in this field, and to numerous publications emphasizing individual performance records such as, current and power densities, linearity and break down voltage. The performance of these, primarily experimental devices, is often reported in the terms of their intended...
The premise of GaN HEMT devices to offer superior power amplification performance in microwave frequencies lead to an extensive research in this field, and to numerous publications emphasizing individual performance records such as, current & power densities, linearity and break down voltage. The performance of these, primarily experimental devices, is often reported in the terms of their intended...
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