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In this work, high voltage NLDMOS performance in terms of high blocking voltage and On-Resistance have been investigated. In order to obtain the optimum electrical performance several key factors have been optimized such as linearity of HVNW profile, drift length and source field plate. Linear HVNW profile is obtained by linearity of HVNW mask. NLDMOS having blocking voltage of 100 V–300 V and lower...
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