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This paper reports a new nano crystal quantum dots (NC-QD) tunable on-chip electrostatic discharge (ESD) protection mechanism and structures. Experiments validated the programmable ESD protection concept. Prototype structures achieved an adjustable ESD triggering voltage range of 2.5V, very fast ESD response of ∼100pS, ESD protection density of 25mA/µm in human body model (HBM) and 400mA/µm in charged...
This paper reports a new nanocrystal quantum-dot (NC-QD)-based tunable on-chip electrostatic discharge (ESD) protection mechanism and structures. Experiments validated the programmable ESD protection concept. Prototype structures achieved an adjustable ESD triggering voltage range of 2.5 V, very fast response to ESD transients of rising time 100 ps and pulse duration ns, ESD protection...
Nonvolatile memories with semiconductor or metal nanocrystals as storage elements in metal-oxide-semiconductor field effect transistors (MOSFET) have been researched intensively by researchers in both industry and academic institutions. Compared with semiconductor nanocrystals, metal nanocrystal devices should have better performance due to the higher storage capacity as a result of higher density...
MOSFET memory devices with Ge/Si HNCs (hetero-nanocrystal) floating gate were fabricated. A superior performance was demonstrated, including larger storage capability, longer retention time, and faster programming speed, which makes Ge/Si HNCs memories promising candidate to replace Si NCs memories.
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