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In order to qualify through silicon via (TSV) structures during manufacturing effectively and efficiently, two low-frequency testing methods were proposed here for electrical property and defect diagnosis of TSV samples. The first method (Method I) based on four-point probe test was adopted to measure via resistance and contact resistance, while the second method (Method II) based on two-point probe...
In the first three quarters of 2013, semiconductor industry witnessed a great multiplication of 12-inch TSV wafers mounting to 1 million plus scale. Despite this increasing popularity, TSV technology suffers from high cost due to yield loss caused by process defects. Poor insulation and connectivity are the major problems for TSV and RDL(Re-Distribution Line) structures. Without a cost-effective test...
Three potential contributing factors to the TSV leakage and breakdown are discussed and analyzed in this study. In addition, an in-line testing methodology is put forward so that leakage and breakdown data could be easily obtained. Finite element method simulation was used to illustrate the testing principle, and experimental test were carried out for validation. It was found that the most contributing...
An in-line testing procedure of blind TSVs is put forward in this study. Insulation integrity is chosen to determine the eligibility. It is to probe the upper end of two or more neighboring TSVs during the manufacturing right after the blind vias being formed. Finite element method simulation was used to illustrate the testing principle, and experimental test were carried out for validation. During...
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