The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
In this work, the phase transition from crystalline state to amorphous state during RESET programming of a phase change memory is studied. A thermal budget approach is developed to describe the effect of cell structure, input current pulse amplitude and the quenching time on the final resistance after RESET programming. The model has been implemented to a circuit simulator and verified by experimental...
In this paper, a compact diode array model for Phase Change Memory (PCM) application is presented. From the diode array structure and numerical simulation result, a quasi-physical compact model is proposed by combining the classical diode equation and simplified bipolar device formulation. This model results in accurate calculation of different leakage current components with parameter setting. Furthermore,...
In this paper, a compact model for phase change memory (PCM) based on carrier transport mechanism is presented. In this model, the set and reset resistances of the cell are calculated through the traditional transport theory and the hopping transport theory respectively, coupling with the temperature and the phase-change kinetics calculation. With the temperature-sensing and storage module embedded,...
In this study, the current driving capability of PN diodes and field effect transistors (FETs) for phase change memory (PCM) applications is investigated. To have a fair comparison, vertical gate-all-around (GAA) MOSFETs with similar cross-section as the PN diodes are selected for comparison. Through extensive 3-D device simulations have been performed based on existing experimental data from the...
As one of the candidates of the next generation non-volatile memory (NVM), phase change memory(PCM) has been paid more attention. But there are many open issue in simulation and phase-change mechanism. In this work, an electrothermal simulation is implemented, which can provide an evaluation method for PCM geometry and scaling design. At the time, a threshold-switching mechanism is discussed. A threshold-switching...
A fully-customized phase change memory (PCM) model for circuit simulation has been developed and implemented in Verilog-A platform. A temperature sensing circuit is used to track the set and reset conditions of the PCM element. The current-voltage of PCM cell at the two different states and the change of states during set and reset can be correctly simulated by the model. The model has also been calibrated...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.