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A complete surface potential-based current-voltage and capacitance-voltage core model for cylindrical undoped surrounding-gate (SRG) MOSFETs is presented in this paper. This model allows the current-voltage (IV) and capacitance-voltage (CV) characteristics to be adequately described by a single set of the equations in terms of the surface potential. The model is valid for all operation regions and...
The author makes the following corrections to the original article (see ibid., vol.53, no.9, p.2008-16, Sept. 2006). Due to miscommunication, the author has included Mansun Chan, Xing Zhang, and Yangyuan Wang as coauthors without their full consent. Jin He should be the sole author of the paper and is responsible for all the contents. He apologizes to the other coauthors whose names should not be...
A complete carrier-based non-charge-sheet analytic theory for the nano-scale undoped surrounding-gate MOSFETs is presented in this paper based on the basic device physics. The formulation is based on the Poisson's equation to solve directly for the mobile carrier-the electron concentration. Therefore, the distribution of the potential, the field and the charge density in the channel away from the...
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