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In this paper, a nanowire tunnel field-effect transistor with dynamic threshold operation architecture (DT-NTFET) is proposed and the numerical study on its characteristics is presented. It shows that, in DT operation, the DT-NTFET can choose the threshold voltage (VT) flexibly by changing the adjust gate voltage, thus it can be applied as a multifunctional device in the future circuit design; in...
A numerical study on the characteristics of dual-material gate nanowire tunnel field-effect transistor (DMG-NTFET) is presented using 3-D TCAD simulations in this paper. Compared with the single-material gate tunnel field-effect transistor (SMG-NTFET), the numerical simulation results demonstrate that the DMG-NTFET has lower leakage current IOFF with a negligible loss of ION. Moreover, the impact...
A dual-material-gate junctionless nanowire transistor (DMG-JNT) is proposed in this paper. Its characteristic is demonstrated and compared with a generic single-material-gate JNT using 3-D numerical simulations. The results show that the DMG-JNT has a number of desirable features, such as high on -state current, a large on/off current ratio, improved transconductance , high unity-gain frequency...
In this paper, a compact diode array model for Phase Change Memory (PCM) application is presented. From the diode array structure and numerical simulation result, a quasi-physical compact model is proposed by combining the classical diode equation and simplified bipolar device formulation. This model results in accurate calculation of different leakage current components with parameter setting. Furthermore,...
A numerical method is proposed to simulate the corresponding terahertz photoresponse which is induced by radiations between source-and-gate and gate-and-drain electrodes in field effect transistors. Simulations illustrate that the response of terahertz radiation in field effect transistor depends on the gate bias. The response contains contributions of different polarities which induced by radiations...
A numerical method can be widely used to simulate FET-based THz wave generation and detection is developed in this paper. It is derived directly from the hydrodynamic equations and implemented in Matlab coding. Simulation results are compared with the existing theories, proving the validity of the developed numerical method and providing useful data that the THz detection theory cannot yield.
A charge-based silicon nanowire FET (SNWT) compact model has been developed. For the first time, inversion charge of SNWT with arbitrary doping concentration is described by an accurate equation including the effects of doping and volume inversion. Analytic drain current, transconductance, output conductance, terminal charges and capacitance are all physically derived and compared with numerical simulation...
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