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Hybrid excited flux-switching machine (HEFS) is a novel brushless synchronous motor. Compared to conventional permanent magnet synchronous machine (PMSM) and permanent magnet flux switching (PMFS) machine, it has additional excitation winding in its stator to modulate the air-gap magnet field. In this paper, the topology and operating principle of HEFS is analyzed. Its dynamic mathematical models...
This paper presents the first demonstration of a high-throughput die-to-panel assembly technology to form Cu interconnections without solder at temperatures below 200°C. This interconnection technology, previously established with individual single-chip packages on both organic and glass substrates, at pitches down to 30μm, is brought up to a significant manufacturable level by two major innovations:...
This paper presents the first demonstration of polycrystalline silicon interposers with fine pitch through package vias (TPV), with less than 5μm RDL lithography at 50μm pitch copper microbump assembly. Silicon interposers with through silicon vias (TSV) and back end of line (BEOL) wiring offer compelling benefits for 2.5D and 3D system integration; however, they are limited by high cost and high...
3D Integration is a good solution for extending Moore's momentum in the next decennium. Through Silicon Via (TSV) is an alternative interconnect technology for higher performance system integration with vertical stacking of chips in package. Due to high demands of chip miniaturization, small diameter TSV with high aspect ratio has become particularly important. This paper focuses on Cu electroplating...
Copper chemical mechanical polishing (CMP) and wafer thinning technologies have been challenges for Through Silicon Via (TSV) interconnect in recent years. In this work, copper CMP slurry and process and wafer level thinning with temporary bonding were studied in detail. The concentration of peroxide (H2O2), citric acid, SiO2 particle and Benzotriazole (BTA) in the CMP slurry and their effects were...
Cu/graphene contact is the key interface for graphene-based devices. In the paper, first-principle calculations are used to investigate the detailed interface atomic and electronic structures and Mulliken charge populations of monolayer, bilayer, trilayer grapheme/Cu (111) interface. The Fermi level is pining by the Cu substrate and shifts due to the n-type doping of graphene.
Nowadays, three-dimensional (3D) integration has been widely applied in semiconductor and electronics industry. When 3D integration applied in MEMS (micro electromechanical system) packaging, it is possible to stack host MEMS chip/wafer with other chips/wafers (such as ASIC) to lower package profile and realize area array sensor system. In this paper, a miniaturized piezoresistive pressure sensor...
Based on the experimental results and existent states of heavy metals in fly ashes and slag, the gas-solid reaction theory during the melting process, heat and mass transfer of particles in fly ashes, chemical dynamics theory such as volatile heavy metals diffuseness, the plentiful experimental datum were analyzed. Theoretical simulated results from the predicted model are basically consistent with...
Intermetallic compounds (IMCs) that grow on the interface between the solder alloy and its bonding pads play a crucial role in the reliability of solder joints. It has been identified that the cracking around the IMC layer is the primary failure mode in lead-free solder joints. Therefore the mechanical behavior of the IMC has attracted great attentions. In this paper, mechanical properties of two...
Under the condition of uniaxial strain(Amplitude is plusmn0.025%), the elastic-plastic finite element method was used to analyze the bonding of conductive/copper wire. The result shows that the plastic strain of X and Y direction is mainly occurred at two positions: one is at the left arc side; the other is at the right arc side of the department. The maximum value of the von Mises equivalent stress...
Due to the thin structure employed in planar packaging, the high electric field intensity may occur inside the power module, leading to degradation of the dielectric performance. To resolve this issue, the Metal-Posts-Interconnected Parallel Plate Structure (MPIPPS) is used to reduce the high field concentration in the power module. However, the high bonding joint in MPIPPS will cause high thermo-mechanical...
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