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This paper presents the first demonstration of a high-throughput die-to-panel assembly technology to form Cu interconnections without solder at temperatures below 200°C. This interconnection technology, previously established with individual single-chip packages on both organic and glass substrates, at pitches down to 30μm, is brought up to a significant manufacturable level by two major innovations:...
This paper presents the first demonstration of polycrystalline silicon interposers with fine pitch through package vias (TPV), with less than 5μm RDL lithography at 50μm pitch copper microbump assembly. Silicon interposers with through silicon vias (TSV) and back end of line (BEOL) wiring offer compelling benefits for 2.5D and 3D system integration; however, they are limited by high cost and high...
3D Integration is a good solution for extending Moore's momentum in the next decennium. Through Silicon Via (TSV) is an alternative interconnect technology for higher performance system integration with vertical stacking of chips in package. Due to high demands of chip miniaturization, small diameter TSV with high aspect ratio has become particularly important. This paper focuses on Cu electroplating...
Copper chemical mechanical polishing (CMP) and wafer thinning technologies have been challenges for Through Silicon Via (TSV) interconnect in recent years. In this work, copper CMP slurry and process and wafer level thinning with temporary bonding were studied in detail. The concentration of peroxide (H2O2), citric acid, SiO2 particle and Benzotriazole (BTA) in the CMP slurry and their effects were...
Nowadays, three-dimensional (3D) integration has been widely applied in semiconductor and electronics industry. When 3D integration applied in MEMS (micro electromechanical system) packaging, it is possible to stack host MEMS chip/wafer with other chips/wafers (such as ASIC) to lower package profile and realize area array sensor system. In this paper, a miniaturized piezoresistive pressure sensor...
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