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We present results on the design of GaAs and InP nanowire lasers. We will discuss the growth of high quantum efficiency, taper free photonic nanowires for laser applications and demonstrate room-temperature lasing from these nanowires.
III–V semiconductor nanowires are promising candidates for optoelectronic device applications due to their unique one dimensional geometry. High quantum efficiency, defined as QE=τnr/(τnr+τr), where τnr is the non-radiative lifetime and τr is the radiative lifetime of minority carriers in the nanowires is necessary for device applications. Due to the large surface area to volume ratio in the nanowires,...
III–V semiconductor nanowires hold outstanding potential as key component for future photonic and electronic devices, among which GaAs/AlGaAs heterostructure nanowires wires show particular promise. However, due to the large surface-to-volume ratio, the carrier lifetime and mobility of GaAs nanowires are extremely sensitive to the surface/interface states. Although nearly intrinsic exciton lifetimes...
A systematic growth temperature study has been performed to achieve high quality InP nanowires (NWs) by selective-area metal-organic vapour-phase epitaxy (SA-MOVPE). The optical quality of these nanowires was evaluated from time-resolved photoluminescence (TRPL) at 300 K.
GaAs/AlxGa1−xAs core-shell nanowires were grown by metal organic chemical vapour deposition with Au-catalysed GaAs cores. Cross-section transmission electron microscope bright field images show that the tapering at bottom of the nanowires is mainly caused by GaAs cap growth. Time-resolved photo-luminescence measurements of single nanowires were taken at room temperature and a minority carrier lifetime...
The photocarrier lifetime within semiconductor nanowires is a critical parameter for optoelectronic applications. Here, we present a technique to determine the lifetime with picosecond resolution, revealing a 7.5 ps lifetime for GaAs nanowires.
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