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This paper aims to characterize two high electron mobility transistors analyzed with sapphire and 4H-SiC substrate. Comparison of the two structures are carried out in terms of threshold voltage (Vt), maximum drain current (ID), transconductance (gm), output conductance (gDS) and gate capacitances (CGS and CGD). Device with sapphire substrate is better in terms of threshold voltage, maximum drain...
A structure of AlGaN/AlN/GaN High Electron Mobility Transistor with surface passivation is proposed in this paper. AlN layer in the proposed structure acts as spacer layer in order to improve the Two Dimensional electron gas mobility formed at the AlN/GaN junction. Output characteristics (Id-Vds), transfer characteristics (Id-Vgs), subthreshold slope and unity gain cut-off frequency (fT) of the device...
This paper proposes a High Electron Mobility Transistor (HEMT) which analyzed using Silvaco ATLASTM Tools. The proposed device is an AlGaN/GaN HEMT with AlN acting as a spacer layer. The design also includes a field plated gate to increase the breakdown voltage (Fbr). The proposed device has a low threshold voltage Vt=−11 V and minimal OFF state leakage current. The device exhibits peak drain current...
This paper presents an AlGaN/GaN High Electron Mobility Transistor (HEMT) structure with SiNx surface passivation layer. A T-shaped gate is formed at the top of GaN cap layer. The structure is simulated with Sapphire substrate. Output characteristics curve (Id-Ids), threshold voltage (FT), subthreshold slope and unity current gain cut off frequency (fr) of the device are observed. The proposed device...
In this paper, we have analyzed the DC & RF performance of a Pseudomorphic high electron mobility transistor (PHEMT) with an Al0.22Ga0.78As supply layer, In0.18Ga0.82As channel layer built on a p-type GaAs. Output characteristics curve (Id-IDS), transfer characteristics curve (ID-VGS), transconductance (from the ID-VGS plot), subthreshold slope, unity current gain cut off frequency (fT) and maximum...
Characteristics of two AlGaN/GaN Heterojunction Field Effect Transistor (HFET) structures are studied in this paper. The structures are simulated with Sapphire and 4H-SiC substrates respectively. Output characteristics curve (Id-Ids), threshold voltage (Ft), transconductance (obtained from Id-Igs curve) and subthreshold slope (SS) of the two HFETs are observed. Device with Sapphire substrate exhibits...
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