In this paper, we have analyzed the DC & RF performance of a Pseudomorphic high electron mobility transistor (PHEMT) with an Al0.22Ga0.78As supply layer, In0.18Ga0.82As channel layer built on a p-type GaAs. Output characteristics curve (Id-IDS), transfer characteristics curve (ID-VGS), transconductance (from the ID-VGS plot), subthreshold slope, unity current gain cut off frequency (fT) and maximum oscillation frequency (fmax) of the device are obtained. The simulated structure shows an improved transconductance of 522 mS/mm, threshold voltage Vt= −1.1 V at VDS= 6 V, peak current (Id) of about 600 mA/mm at VGS= − 0.4 V. The proposed device achieves fT= 3.16 GHz and fmax= 31.6 GHz. All simulations are performed using Silvaco ATLASTM.