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The effects of thermal annealing on the interface reactions and bonding structures of CeO2/La2O3 stacked dielectrics are investigated by x-ray photoelectron spectroscopy (XPS) measurements. We found that the thermal treatment can lead to significant interface oxidation and silicate formation both in the bulk and at the interface. Sample with 600 °C annealing exhibits some better interface properties...
Progress of ICT (Information and Communication Technology) made our society ‘smart’ and convenient. Already, internet, SNS, smart phones, IoT, and big data analysis are available. In near future full-automatic automobile drive will become possible, and even some people expected that the artificial intelligence will exceed the human brain ability 30 years from now. In anyhow our society will be revolutionarily...
2D distribution of depth profiling of impurities and their activity/non-activity are very important for development of process technology for nano-scale 3D devices. Si Fin structures doped with Boron (B) were evaluated by soft X-ray photoelectron spectroscopy (SXPES) and a feasibility of detecting the difference were demonstrated between the chemical bonding states as well as concentrations of B on...
Recently, CMOS downsizing has been accelerated very aggressively in both production and research levels, and even beautiful transistor operation of several nm gate length CMOS devices were reported in conferences. However, many serious problems are expected for implementing small-geometry MOSFETs into large scale integrated circuits. It is still questionable if we can successfully introduce deep sub-10...
Vacancy-type defects in plasma immersion B-implanted Si were probed by a monoenergetic positron beam. A positron annihilates with an electron and emits two 511 keV γ-quanta. Doppler broadening spectra of the annihilation radiation were measured and compared with spectra calculated using the first-principles calculations. For the as-doped sample, the vacancy-rich region was found to be localized within...
Chemical bonding states of doped impurities such as B, As, P and Sb in Si were analyzed by soft X-ray photoelectron spectroscopy (SXPES). A step-by-step shallow etching and Hall effect measurements were combined with the SXPES to investigate correlation between chemical bonding state and electrical activation, and to clarify depth profiles of concentration of activated and deactivated impurities in...
In recent few years, significant progress has been seen in the study of 0.1 and sub-0.1 micron gate length MOSFETs. In this paper, recent advance in the small-geometry MOSFETs is described and the limit of MOSFET downsizing is predicted. Then, a concept of future ULSI in 2010's is discussed.
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