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The progress of the electronics has been conducted until today by the downsizing of devices for more than 100 year since its beginning in early 20th century. However, it is believed now that the downsizing will reach its limit in several years because of several sure reasons. After reaching the limit, we cannot expect such a big progress as the past for electron devices in terms of cost, performance...
Progress of ICT (Information and Communication Technology) made our society ‘smart’ and convenient. Already, internet, SNS, smart phones, IoT, and big data analysis are available. In near future full-automatic automobile drive will become possible, and even some people expected that the artificial intelligence will exceed the human brain ability 30 years from now. In anyhow our society will be revolutionarily...
Although Si MOS devices have dominated the integrated circuit applications over the four decades, it has been anticipated that the development of CMOS would reach its limits after the next decade because of the difficulties in the technologies for further downscaling and also because of some fundamental limits of MOSFETs. However, there have been no promising candidates yet, which can replace Si MOSFETs...
Although silicon-based CMOS devices have dominated the integrated circuit applications over the past few decades, it is expected that the development of CMOS would reach its limits after the next decade because of the difficulties in downsizing and also some fundamental limits of MOSFETs. However, there are no promising candidates which can replace CMOS with better performance and high-density integration...
A Schottky barrier height modulation technique for achieving a low Schottky barrier height in Ni silicide metal source/drain by Er layer insertion was reviewed. The effectiveness and possibility of the technique was demonstrated by fabricating Schottky barrier source/drain MOSFETs onto both bulk and SOI substrates.
Thermal stability of rare earth oxides La2O3/Y2O3 stack structure was studied. X-ray photoelectron spectroscopy (XPS) analysis revealed that Y2O3 layer suppresses the formation of SiO 2 at interface. It was found that mobility degradation in La-based gate dielectric MOSFETs during high temperature annealing can be prevented by inserting a thin Y2O3 interfacial layer
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