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Although Si MOS devices have dominated the integrated circuit applications over the four decades, it has been anticipated that the development of CMOS would reach its limits after the next decade because of the difficulties in the technologies for further downscaling and also because of some fundamental limits of MOSFETs. However, there have been no promising candidates yet, which can replace Si MOSFETs...
Although silicon-based CMOS devices have dominated the integrated circuit applications over the past few decades, it is expected that the development of CMOS would reach its limits after the next decade because of the difficulties in downsizing and also some fundamental limits of MOSFETs. However, there are no promising candidates which can replace CMOS with better performance and high-density integration...
In this paper, first we have demonstrated the suitability of Plackett-Burman Design of Experiment (PB-DOE) method for the sensitivity analysis of a device and a circuit performance to inter- and intra-die process variations. Further, it is shown that PB-DOE method takes relatively less computational time and provides reasonable accuracy as compared to standard Monte Carlo Method. In the next part...
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