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Voltage control in the distribution system is becoming very challenging due to the enhanced number of control variables and the increasing penetration of distribution generations (e.g. photo-voltaic arrays). There is a need for new voltage control strategy considering fast control and four-quadrant operation of energy storage system in presence of the traditional voltage control devices like capacitor...
Wafer reconstitution is a vital process for serving as a buffer to decouple the processing developments between IC fabrication and electronics packaging. By this approach, the IC packaging is then independent from the chip processing. However, such a process brings numerous mechanical loadings during molding and curing phases. Without carefully planning, failures such as die-shifting and excessive...
Contamination and Electrical Overstress are typical failure modes that may appear in failed devices. However, the clean exposure and excellent preservation of such failure sites is often found challenging or even impossible due to the limitations of the decapsulation techniques and tools available. The accuracy of failure analysis can be jeopardized during decapsulation due to the introduction of...
In this work, we conduct research on optimizing schemes for the RRAM-based implementation of CNN. Our main achievements contain: 1) A concrete CNN circuit and corresponding operation methods are developed. 2) Quantification methods for utilizing binary or multilevel RRAM as synapses are proposed, and our CNN performs with 98% accuracy on the MNIST dataset using multilevel RRAM and 97% accuracy using...
Molybdenum disulfide (MoS2), a member of the transition metal dichalcogenide (TMD) family, is a 2D semiconductor with a direct bandgap of ∼1.8 eV for single layers. Its bandgap allows for high Ion/Ioff metal-oxide semiconducting field-effect transistors (FETs). More relevant for radio frequency (RF) wireless applications, theoretical studies predict MoS2 to have saturation velocities, Vsat > 3×10...
In this work, we demonstrate a new concept for realizing high threshold voltage (Vth) E-mode GaN power devices with high maximum drain current (ID, max). A gate stack ferroelectric blocking film with charge trap layer, achieved a large positive shift of Vth. The E-mode GaN MIS-HEMTs with high Vth of 6 V shows ID, max 720 mA/mm. The breakdown voltage is above 1100 V.
Implementation of thick Cu inductor in IC chips has been a highly challenging task for Far-backend packaging industry. One of the major concerns is that the thicker Cu trace wrapped by re-passivation polymer layers (Polymer-1 & Polymer-2) is often accompanied by remarkable internal stress in the overall package, which is plagued with the risk of layer-to-layer delamination and/or interface micro-cracks...
Sharrock [1][2] derived a law about the time-dependent coercivity for hard magnetic materials Hc(t)=H0{1−[kBT/KV×ln(At/0.693)]1/2}(1) Conventional micromagnetics using the Landau-Lifshitz (LL) equations, with a thermal fluctuation field and temperature-dependent parameters included, can take the thermal activation into account; however, the energy minimum cannot be achieved.
Regenerative shock absorbers (RSAs) can convert the kinetic energy originally dissipated in the dampers to electrical energy, with the help of electric machines [1, 2].
The thermal demagnetization of the magnet by the eddy-current loss at high rotational speeds often becomes one of the major problems in the PM machines [1].
In the present, unmanned aerial vehicles (UAV) has arisen more and more attention due to the high efficiency, ease and safety in completing complex missions [1][2].
Soft magnetic composite (SMC) material is a new soft magnetic material, now it is popular in the designing of permanent magnet machine where high operation frequency and 3-D flux path required, due to its advantages of low eddy current loss and magnetic isotropy.
By appropriately inserting ferrite magnets into the rotor of a synchronous reluctance motor (SynRM), it is realized that the operational power factors and torque outputs of this SynRM can be improved.
Recently, wireless power transmission technologies have been demonstrated that they have wide applications, such as micro medical robotics and electric vehicles [1] – [5].
In this paper a compact model for intrinsic capacitances for Tunnel field-effect transistors (TFETs) is presented. The model is derived from the carrier concentration and current flowing the channel of a Si Double-Gate (DG) n-type TFET. It represents a particularly good estimation of TFET capacitances and the flexibility of this model makes it possible to apply it for single-gate or p-type TFETs as...
Compared with three-phase SRM, multi-phase SRM is higher power density and lower torque ripple. However, with phase number increasing, the requirement of power converters for multi-phase SRM such as using less power devices and independence between phases are enhanced. In this paper, six kinds of power converters for six-phase SRM are investigated and compared including asymmetric half bridge (AHB)...
In order to improve the reliability of Switched Reluctance drive system, this paper presents a new control method to reduce the capacitance value of DC bus. Firstly, based on the equivalent mathematical model of the electrolytic capacitor, the capacitance value of the DC bus is estimated at the fixed frequency. Three methods are proposed to reduce the capacitance of the bus, and the mathematical relationship...
The study aims to explore the influence of work-family conflicts on job involvement and organizational commitment, we also investigated the moderating effect of perceived supervisor support and the mediating effect of job satisfaction. 558 employees from small and middle size enterprise participated in our research, they came from 19 organizations including Eight different regions such as Beijing,...
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