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We report an advanced method of analyzing and modeling MOSFET characteristic fluctuations in CMOS circuits. We focused on gate space dependence, STI width dependence, and interaction between gate-STI distance and STI width in 65-nm node technology with a 40-nm-gate length. These dependences haven't been treated by the conventional BSIM and other models. Gate space dependence is well modeled by treating...
The first successful geodetic Very Long Baseline Interferometry (VLBI) observations to Antarctica were made on baselines from Syowa Station (Antarctica) to Tidbinbilla (Australia) and to Kashima (Japan) in January 1990. Regular geodetic experiments started in 1998 with the installation of a permanent VLBI terminal at Syowa Station. These observations are conducted at the standard geodetic VLBI frequencies...
The effects of heat treatments on the reliability of ultrathin gate oxide and the mechanism of the reliability degradation are described. Dielectric breakdown reliability of ultrathin tunneling oxide for various post-annealing conditions is discussed. The dielectric breakdown reliability of ultra-thin tunneling oxide is degraded by high-temperature post-annealing. The charge to breakdown is reduced...
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