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A potential technology by silicon interposer enables high bandwidth and low power application processing devices of the future, because the demand of smart mobile products are driving for higher logic-to-memory bandwidth (BW) over 30 GB/s with lower power consumption and ultra-memory capacity. This paper presents a 2.5D-IC structure with silicon interposer to demonstrate electrical performances including...
A potential technology by silicon interposer enables high bandwidth and low power application processing devices of the future, because the demand of smart mobile products are driving for higher logic-to-memory bandwidth (BW) over 30 GB/s with lower power consumption and ultra-memory capacity. This paper presents a 2.5D-IC structure with silicon interposer to demonstrate electrical performances including...
A potential technology by silicon interposer enables high bandwidth and low power application processing devices of the future, because the demand of smart mobile products are driving for higher logic-to-memory bandwidth (BW) over 30 GB/s with lower power consumption and ultra-memory capacity. This paper presents a 2.5D-IC structure with silicon interposer to demonstrate electrical performances including...
We report here the study of synthesis and characterization of length-tunable vertically-aligned CuO nanowires grown by thermal oxidation of electrodeposited Cu films. From TEM and electron diffraction analyses, all the CuO nanowires produced were single crystalline with a monoclinic structure. For samples oxidized at different temperatures, the lengths of CuO nanowires were found to increase parabolically...
FinFET is the most promising double-gate transistor architecture to extend scaling over planar device. We present a high-performance and low-power FinFET module at 25 nm gate length. When normalized to the actual fin perimeter, N-FinFET and P-FinFET have 1200 and 915 ??A/??m drive current respectively at 100 nA/??m leakage under 1V. To our knowledge this is the best FinFET drive current at such scaled...
We propose an all-optical 3R regeneration scheme utilizing silicon-wire nonlinear photonics including cross-phase modulation and free-carrier dispersion. From the simulation results, the Q-factor of 10-Gb/s RZ signals can be improved with a suitable free-carrier lifetime.
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