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A monolithically integrated balanced uni-traveling-carrier photodiode (UTC-PD) with a tunable 2times2 multimode interference (MMI) coupler has been fabricated and tested. Two waveguide UTC-PDs are electrically isolated using high-energy Helium implantation, and then connected in series using a monolithic metal interconnect. On chip metal-insulator-semiconductor (MIS) capacitors provide some DC decoupling...
The authors report an InP DHBT IC technology that incorporates an ion implanted N+ collector-pedestal for collector-base capacitance (C cb) reduction. The technology utilizes electroplating processes and sidewall spacers to form a high yield self-aligned base-emitter junction. Devices with 0.4 mum emitter junction widths demonstrate peak ft and fmax values of over 370 GHz. The devices demonstrate...
InP HBTs at the 500 nm scaling generation have attained 450 GHz balanced cutoff frequencies and ~4 V breakdown. With such devices, 150 GHz digital circuits (static dividers) have been demonstrated. 175 GHz amplifiers have been demonstrated with slower HBTs. We discuss transistor scaling laws and scaling limits for realizing digital and analog/RF circuits at sub-mm-wave frequencies; the most critical...
An ultra-low power static frequency divider with a maximum clock frequency > 61 GHz was designed and fabricated into a 500 nm InP/In 0.53Ga47As/InP double heterojunction bipolar transistor (DHBT) technology utilizing a collector pedestal process for reduced base-collector capacitance Ccb. This is the first reported digital circuit in this material system employing such Ccb reduction techniques...
In0.53Ga0.47As/InP double heterojunction bipolar transistors with implanted subcollectors have been designed and fabricated to eliminate the base access pad capacitance. A blanket Fe implant eliminates the interface charge and a patterned Si implant creates an isolated N++ subcollector. The extrinsic base-collector capacitance Ccb associated with the base interconnect pad (-25% of the total Ccb) is...
We report the InP HBT scaling strategies required for 80-160 Gb/s optical fiber ICs, and a variety of recent HBT results, including 87 GHz static frequency dividers, 175 GHz amplifiers, and >450 GHz fmax DHBTs
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