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In this study, double-channel AlGaN/GaN high electron mobility transistors are designed with a slant gate field plate to improve the device breakdown voltage. Sentaurus TCAD is used for device simulation. At the first stage, the slant gate field plate is compared with a regular gate field plate to study the reduction of the peak electric field at the gate edge. It is found that the slant gate field...
The group IV elements doped ZnO thin-film transistors (TFTs) were deposited by radio-frequency magnetron sputtering on substrates at 150 . The influence of the dopant concentrations on the device performance was examined. Device characteristics such as threshold voltage were modulated and field effect mobility and saturated current could...
A new procedure to determine source/drain series resistance and effective channel length has been developed for MOSFETs operated in linear region. The gate-bias dependence of source/drain resistance is considered by differential and integration processes. This new-developed procedure has been applied to devices with mask channel lengths of 0.23, 0.2, and 0.185 μm. The parameters extracted with this...
A simple procedure to determine source/drain series resistance and effective channel length has been developed for advanced MOSFETs operated in linear region. The gate-bias dependence of source/drain resistance is considered. This new-developed procedure has been applied to devices with mask channel lengths of 0.23, 0.2, and 0.185 ??m. The parameters extracted with this procedure have been validated...
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