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The Impact Ionization MOS (IMOS) transistor is a kind of promising concept as a candidate of MOS transistor due to its abrupt switching. However, some key issues will limit IMOS transistors for practical applications. In this paper, detailed physical explanations for the non-saturation of IMOS output characteristics and the unanticipated low drive current are presented. A new method to enhance the...
Hot carrier injection (HCI) and negative bias temperature instability (NBTI) reliability of n-channel and p-channel silicon nanowire transistors (SNWTs) have been investigated in this paper. It was found that the worst-case bias for HCI in n-type SNWTs is different from the conventional planar devices, and HCI is not a critical concern for ultra-scaled SNWTs. For the pMOSFETs, NBTI in SNWTs is relatively...
- In this paper, the analog/RF performance and reliability behavior of silicon nanowire transistors (SNWTs) are investigated. Analog/RF Figures-of-Merit (FoMs) of SNWTs are studied, including transconductance efficiency, intrinsic gain, cutoff frequency and maximum oscillation frequency. The impact of device parameter fluctuations is also evaluated. In addition, hot carrier injection (HCI) and negative...
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