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The continuous scaling of device dimension and the introduction of FinFET technology has led to new reliability concerns, such as Bias Temperature Instability (BTI), Stress-Induced Leakage Current (SILC), Self-Heat Effect (SHE) and Time Dependent Junction degradation (TDJD). These reliability issues become process and design bottle neck for the advanced technology development because of their stringent...
Time dependent junction degradation (TDJD) is studied in detail for advanced FinFET technology. It has been shown that TDJD is caused by band to band tunneling current increase and is dominated by junction current between S/D to fin body underneath gate (IS/D-to-F). This current leakage can be controlled by process optimization and junction engineering. Physics behind TDJD is explored by comparing...
A systematic study of time dependent source/drain junction degradation (TDJD) for extremely scaled FinFETs is conducted. It is verified that junction degradation can be attributed to the increase in band to band tunneling due to generation of new traps upon application of stress. Impact of varying stress conditions, drain engineering and junction area on TDJD is also studied. It is shown for the first...
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