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This paper reports complete Capacitance-Voltage (CV) characterization of InAsySb1−y Quantum Well Field Effect Transistor (QWFET) along with an analysis of ballistic transport performance. 1-D coupled Schrodinger-Poisson equations are solved for electrostatic performance analysis of QWFET considering wave function penetration and strain effects. Dependence of CV characteristics on some important process...
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