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The 3-D integration using through silicon vias (TSVs) is one of the most promising approaches to overcome the interconnect delay problem of current CMOS technologies. Nevertheless, the TSV energy consumption is not negligible due to the high capacitive coupling. This paper presents an abstract and yet accurate model to estimate the pattern-dependent energy consumption in arrays of TSVs; it is the...
3D integration is one of the most promising solutions for the scaling of future integrated circuits (ICs). Nevertheless, the 2D metal wires and 3D through silicon vias (TSVs) are frequently performance bottlenecks of 3D ICs, due to their high capacitive crosstalk, which can be reduced by a coding approach. In this work we show that existing TSV crosstalk avoidance codes (CACs) are impractical for...
New 3D production methods enable heterogeneous integration of dies manufactured in different technology nodes. Asymmetric 3D interconnect architectures (A-3D-IAs) are the communication infrastructure targeting these heterogeneous 3D system on chips (3D SoCs), for which design methodologies and design tools are still missing. Here, a design method is proposed following an incremental approach enabled...
In modern nanometric and deep sub-micron (DSM) technologies, the energy dissipation in the interconnect architecture is dominating the overall energy budget. This paper presents a precise mathematical model for the energy consumption of multi-segment interconnects, including misalignment effects. The difference in the propagation of the signals due to the unequal effective capacitance seen by each...
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