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We propose an empirical model to accurately predict electrical activation ratios of phosphorus and nitrogen implanted silicon carbide for arbitrary annealing temperatures. We introduce model parameters and compare the activation behaviour of the two donor-type dopants. Our investigations show that the activation ratio of the nitrogen implanted silicon carbide is similar to a step function, while the...
We investigate anisotropical and geometrical aspects of hexagonal structures of Silicon Carbide and propose a direction dependent interpolation method for oxidation growth rates. We compute three-dimensional oxidation rates and perform one-, two-, and three-dimensional simulations for 4H- and 6H-Silicon Carbide thermal oxidation. The rates of oxidation are computed according to the four known growth...
We investigate the anisotropic behavior of dry and wet thermal oxidation of silicon carbide for which a high-accuracy three-dimensional simulation model is entirely missing. To bridge this gap, we propose a direction dependent interpolation method for computing oxidation growth rates for three-dimensional problems. We use our method together with available one-dimensional oxidation models to simulate...
We propose a direction dependent interpolation method for silicon carbide oxidation growth rates and we compute these rates for three-dimensional simulations according to known growth rate values. Additionally, we analyze the temperature dependence of silicon carbide oxidation for different crystal directions. Our approach is an essential step towards highly accurate three-dimensional oxide growth...
The suprachiasmatic nucleus (SCN) of the hypothalamus is the mammalian circadian pacemaker that plays a dominant role in the generation and control of daily physiological and behavioral rhythms. The coupling of the SCN neuronal activity with the solar day–night cycle and the intercellular communication between SCN neurons are the most important factors that ensure the precise 24 h timing of the circadian...
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