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Ruthenium dioxide (RuO2) thin films can be used as the electrode material for future technology nodes. In this work, atomic layer deposition (ALD) was used to deposit thin films of RuO2 on SiO2 using bis-(ethylcyclopentadienyl)-ruthenium [Ru(EtCp)2] as the precursor and oxygen (O2) plasma as the reducing agent. The thermal stability of the deposited films were investigated in the N2 ambient and in...
Spin-on-dopant and rapid thermal diffusion are used as the doping method for fabricating planar tunneling field effect transistor (TFET) in this paper to acquire abrupt doping profile and high surface doping concentration. Due to the heavy surface doping the on-current of TFET is enhanced. The ambipolar characteristics of TFET are also inhibited by reducing the drain doping concentration.
Ruthenium (Ru) is a promising material for the future backend of line of semiconductor technologies beyond 20 nm. In this work, high quality Ru and ruthenium oxide (RuOx) thin films were grown on SiO2 substrates by plasma-enhanced atomic layer deposition (PEALD) technique using bis-(ethylcyclopentadienyl)-ruthenium [Ru(EtCp)2] as the precursor and oxygen (O2) plasma as the reducing agent. The impacts...
The over-speed coupling on hump could lead to some serious accidents, such as the damage of cars and the shift of fastening freight, which could affect the security of shunting operation. According to uncertainty and fuzziness of the accidents' factors, their cause-and-effect relationship is analyzed and fuzzy Petri Net model is established by transferring a fuzzy Fault Tree into a fuzzy Petri Net,...
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