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Variability of Low Frequency Noise (LFN) and Random Telegraph Noise (RTN) is a main concern in analog CMOS integrated circuits. For instance circuits such as current reference, SRAM, ring oscillators are ultimately limited by noise level and mismatch. In this work, CORNER DOPED devices have been fabricated, measured, and finally compared with standard CMOS technology with particular emphasis on weak...
Variability of Low Frequency Noise (LFN) and Random Telegraph Noise (RTN) is an important concern for many analog CMOS integrated circuits. In this paper, transistors with enclosed gate layout are examined and compared with standard layout transistors, with particular emphasis on weak inversion region. Enclosed gate transistors show an improved gate voltage mismatch in weak inversion. A compact MOSFET...
This work presents an ultra-low power oscillator designed to target different contexts, such as crystal-assisted time keeping, reference oscillator to optimize the always on domain of a microcontroller or wake-up timer. This oscillator enables ultra-low power operation in 0.18 µm CMOS technology; the core oscillator consumes 2.5 nW at room temperature, with a temperature stability of 14 ppm/°C [−40°C...
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