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A 4.1Mpix 280fps stacked CMOS image sensor with array-parallel ADC architecture is developed for region control applications. The combination of an active reset scheme and frame correlated double sampling (CDS) operation cancels Vth variation of pixel amplifier transistors and kTC noise. The sensor utilizes a floating diffusion (FD) based back-illuminated (BI) global shutter (GS) pixel with 4.2e-rms...
The session presents advances in image sensors covering the emerging topics of 3D stacking, organic photoconductive film, fluorescent imaging, global shutters and dynamic vision sensors. The first paper, by Samsung, presents a vision sensor that processes events group by group using a fully synthesized word-serial group address-event representation. Then, InSilixa presents an integrated biochip with...
The evolution of CMOS image sensors (CIS) and the future prospect of a “Sensing” world utilizing advanced imaging technologies promise to improve our quality of life by sensing everything, everywhere, every time. Charge Coupled Device image sensors replaced video camera tubes, allowing the introduction of compact video cameras as consumer products. CIS now dominates the market for digital still cameras...
The demand for low-noise (for capturing a clear image in low-light conditions), high-speed (for slow-motion applications and reducing rolling shutter distortion) and high-resolution (for formats beyond 4K) CMOS image sensors is still increasing. In addition, the emerging camcorder market typified by handsfree devices requires the simultaneous capture of still and moving images. To improve noise performance,...
A 1/1.8-inch 6.4 MPixel 60 frames/s CMOS image sensor fabricated in a 0.18-mum single-poly triple-metal (1P3M) process is described. A zigzag-shaped 1.75 T/pixel architecture and a 10-bit counter-type column parallel ADC enables 2.5times2.5 mum2 pixels. The resulting pixel has 38% fill factor and 12ke-/lux.s sensibility. In addition, full frame and 2times2 binning modes are interchangeable without...
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