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A SiGe HBT is simulated using a deterministic Boltzmann equation solver with full band effects. An anisotropic band structure fitted to full band for high energies significantly improves the simulation of SiGe HBTs with a spherical harmonics expansion solver, especially when it comes to breakdown voltages. This makes it a more efficient alternative to stochastic Monte Carlo simulation.
The Pauli principle is included in a deterministic Boltzmann solver based on a spherical harmonics expansion of the distribution function. The Newton-Raphson scheme is applied to solve the nonlinear Boltzmann equation, and it is found that the inclusion of the Pauli principle introduces no numerical problems, even for multi-dimensional semiconductor devices. As a numerical example, the impact of the...
The Boltzmann equation is solved by a spherical harmonics expansion including a magnetic force perpendicular to the two-dimensional simulation plane in real space. The new approach is used to verify a methodology for extracting the electron minority mobility of SiGe HBTs. Magnetotransport in a silicon n+nn+ device is simulated and a strong impact of the maximum number of spherical harmonics on the...
We have developed a Boltzmann equation solver for two-dimensional (2D) semiconductor devices based on the spherical harmonics expansion and the maximum entropy dissipation scheme for stabilization. The large system of equations is partitioned according to the order of the spherical harmonics and solved by a memory efficient blockwise Gauss-Seidel method. Results are presented for a 2D NPN Si bipolar...
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