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Noise in an ultimate SiGe HBT with peak cutoff and maximum oscillation frequencies above 1THz is investigated by a microscopic transport model based on the Boltzmann equation, which can handle the quasi-ballistic transport, high frequencies and the complicated band structure in such devices. The noise performance of the transistor is excellent due to the high intrinsic speed. For example, the minimum...
A SiGe HBT is simulated using a deterministic Boltzmann equation solver with full band effects. An anisotropic band structure fitted to full band for high energies significantly improves the simulation of SiGe HBTs with a spherical harmonics expansion solver, especially when it comes to breakdown voltages. This makes it a more efficient alternative to stochastic Monte Carlo simulation.
The Pauli principle is included in a deterministic Boltzmann solver for multi-dimensional semiconductor devices. The Newton-Raphson scheme is applied to solve the nonlinear Boltzmann equation, and it is found that the inclusion of the Pauli principle introduces no numerical problems, even for semiconductor devices. The impact of the Pauli principle is numerically investigated for a scaled SiGe HBT.
In this paper, a deterministic approach to electron transport based on the spherical harmonics expansion of the Boltzmann equation is presented for SiGe heterojunction bipolar transistors. In order to take into account the position-dependent minima of the valleys of the conduction band, a new formulation of the discretized scattering integral for non-aligned and non-equidistant energy grids is developed...
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