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In this paper, a fast, fully verifiable, and hardware predictable ASIC design methodology is proposed and demonstrated for the Vertical Slit FET (VeSFET) based integrated circuits. The key enablers of this methodology are the unique and powerful capabilities of pillar-based two-side accessible transistor arrays and monolithic 3D integration. VeSFET is a successfully fabricated transistor of this kind...
This paper investigates the n-type vertical slit FET (VeSFET) performance at 7-nm node and beyond by TCAD simulation. VeSFET is a twin-gate device with 3-D monolithic integration-friendly vertical terminals and horizontal channel manufactured based on SOI wafer with conventional CMOS fabrication hardware. The second gate provides the capability of transistor behavior adjustment and the potential for...
Today many design houses must outsource their design fabrication to a third party which is often an overseas foundry. Split-fabrication is proposed for combining the FEOL capabilities of an advanced but untrusted foundry with the BEOL capabilities of a trusted foundry. Hardware security in this business model relates directly to the front-end foundry's ability to interpret the partial circuit design...
We describe custom 6R, 2/4W general-purpose register files (GRF) in an ASIC-based SOC implemented in a N28 CMOS technology, which has roughly a 2∼3 X smaller area, 2 X faster speed, and 5 X lower power than a logic-synthesized version. Synthesized and custom GRFs also have a different read behavior from static and dynamic circuitry used, respectively. This is addressed by modifying a bypass control...
Power wall has become one of the main bottlenecks of future VLSI designs. A recently proposed junctionless twin-gate Vertical Slit Field Effect Transistor (VeSFET) is a low power and thermal friendly device, with highly regular layout, and two-side accessibility. These properties are critical for advanced 2D/3D technologies. SRAMs are fundamental blocks of VLSI systems, which are usually used for...
We present a pulse latch with a measured Vccmin at the circuit of 0.42 V and pulse width of approximately 3 FO4-inverter delays. A wider operating window and reduced dependence on the input rise-time and PVT variations were obtained using a new pulse generator. A pulse in the new generator starts when its input crosses the switching level of its input gate, unlike in the classic text-book-style pulse-generator...
This paper describes a tile-able 16-kByte 6-T SRAM macro in a High-K Metal-Gate (HKMG) 28-nm bulk technology with an operating window from 4.8 GHz at 1.12 V VDD down to 10 MHz at 0.5V, meeting almost all of the Dynamic Voltage Frequency Scaling (DVFS) requirements of Level-1 (L1) caches of a digital microprocessor SOC. It uses an unmodified technology-supported 0.156um2 high-current (HC) SRAM cell...
This paper describes an on-chip intellectual property (IP) testing platform, Universal High Frequency Test structure (UHFTs), which makes logic, memory, and analog / mixed-signal IPs at-speed testable in the same testing structure. Any functional testing pattern can be loaded from an external pattern generator or a tester through standard 5-pin JTAG interfaces operating at 10MHz or below. The on-chip...
A fully-pipelined tile-able 1MB SRAM IP with a 0.127um2 cell in a HKMG 28nm bulk technology has an area of 1.39mm2/MB with 79.2% array efficiency. It operates with 2-cycle latency up to 1GHz. The no-repair hardware has a circuit limited yield of 99.92 and 53% at 100 and 850MHz, respectively with 0.75V VDD. A Data Retention Voltage of 0.42V has been measured.
In this paper, we present a 7 Gbps/Ch quad SerDes integrated with a 4times4 load-balanced switch fabric circuit for high speed networking applications. To achieve high-speed and low area, we propose an area-saving RF model device for the SerDes design. The area-saving RF model has almost the same speed and jitter performance with the RF model but only consumes one half of the area. In our hybrid design...
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