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Power GaN HEMT components offer very interesting performances (high voltage, high current, low on-resistance, fast switching), but the GaN material has some “defects” that can lead to carrier trapping, which induces dynamic electrical phenomena. Thereby, static measurement of the GaN HEMT components requires some reconsideration. In this work, we analyze how the typical static electrical parameters...
Currently a strong demand for robustness has emerged in all areas of power devices applications. Accordingly, phenomena at the origin of the failure mechanism must be studied. However, these phenomena are difficult to capture experimentally; hence, multi-physics 3D FEM simulations are strongly needed.
This paper presents the use of 3D transient electrothermal modeling methodology to investigate the effects of delamination on power MOSFET with SnPb soldering when a charge short-circuit occurs. The results given by electro-thermal simulations allow the study of phenomena difficult to capture experimentally, like focalization of the temperature and current densities due to the structure topology and...
Currently electro-thermal simulations performed with 3D FEM simulators like ANSYS or COMSOL Multiphysics are limited to an imposed current flow through resistive materials. However, in the case of power MOS gated transistors like VDMOS transistors or IGBT, the channel resistance evolves with the gate voltage. This phenomenon is usually neglected in ON-state applications but seems to be determinant...
This paper deals with the power assembly failure anticipation by monitoring its mechanical state. From this perspective, we evaluate the impact of mechanical stress accumulation before crack opening on the electrical characteristics of a VDMOS transistor using 2D physical simulations. The power device I(V) characteristics depend both on temperature and mechanical stress. To estimate the impact of...
This paper deals with the reliability of power device assembly. We make use of 3D electro-thermo-mechanical simulations tools to highlight the power chip deformation during its conducting state. Moreover, we carry out experimental deformation measurement using a T.D.M® (Topography and Deformation Measurement) equipment. These simulations and measurements could allow to evaluate the reached mechanical...
Reliability is a major economic and technical challenge for power electronics dedicated to embedded applications (avionics, automotive, hybrid vehicles, etc.). As the damage in a power assembly is essentially due to thermo-mechanical stress resulting from temperature variations (ambient and junction) [1], industrial actors ask for integrated devices allowing anticipation of the failure by monitoring...
Based on 3D FEM electro thermo mechanical simulations (COMSOL) and 2D multi-cells simulation (Sentaurus TCAD), we explore the impact of main ageing phenomena (bonding wire lift off and solder joint delamination) at the origin of power assembly failures, on the electrical characteristics of MOS gated power devices (IGBT, VDMOS). Electrical characteristics variations are analyzed with a view to using...
Based on 2D mechanical and physical simulations, we explore the impact of solder joint ageing at the origin of power assembly failures, on the electrical characteristics of multi IGBT cells. Electrical characteristics variations are analyzed with the aim of using them for health monitoring of embedded power assemblies.
Based on 3D FEM electro-thermal simulations, we explore the thermal impact of source metallization ageing inducing a bonding wire lift off on a VDMOS device. This kind of failure is usually modeled by changing the geometry of the assembly, without considering the physical properties evolution of aged materials such as the source metallization. This work aims to highlight the importance of taking into...
Reliability is a major economic and technical challenge for power electronics. This paper aims at exploring the impact of reconstruction of source metallization [1] due to ageing on temperature and mechanical strain distributions within a smart power device. Based on 3D FEM electro-thermal simulations, we explore thermal and mechanical impact of source metallization ageing on bonding wires during...
Control of reliability is a major economic and technical challenge for power electronics. Today, models can be used to predict failure, but to be accurate this models should be updated continuously by the real mechanical state of the device. A possible solution is to make use of the silicon piezoresistive properties of MOS gated power devices (LDMOS, VDMOS, ...) and to take advantage, without increasing...
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