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ESD protection circuit is a significant peripheral circuit to ensure the reliability of the chip. Whole chip ESD protection design of CMOS chips with large chip area and multiple power domains is a difficult point in ESD protection design. A whole chip ESD protection design for a 16-channel 16-bit D/A converter with multiple power domains under 0.6um CMOS processis carried out. The final experiment...
A device for electrostatic discharge MDSCR (Modified Dual-SCR) with high holding voltage (HHVDDSCR) is presented in this paper. Several diffusion regions are inserted in the discharge current path to reduce the feedback effect with the shunt-transistors. Compared to the traditional methodologies to increase the holding voltage, the HHVMLDSCR can achieve higher holding voltage performance without any...
A mixed-signal data acquisition system with multi-channel ADC is introduced in this work. The ESD Co-design methodology for on-chip and on-board components are analyzed for ESD HBM failure on the input film resistor with the size of 0402. By investigating the on-chip protection structure and the parasitic effect of the onboard components, popular diodes 1N4148 are integrated on the substrate to shunt...
A failure analysis of long-distance power supply system is presented in this paper. DC-DC converter module integrates the converter chip, feedback resistors, bypassing capacitors and storage diode together into a small metal package. During the power on period, the power transistor is broken by the transient peak through a wire of almost 100m is required by the higher level systems. To solve the problem,...
A Low power Amplitude Shift Keying (ASK) demodulator circuit for passive UHF Radio Frequency Identification (RFID) tag is designed in this paper with several area-saving techniques. Current source is employed to realize the envelop detector instead of resistor to reduce the area. Differential circuit is inserted into the demodulator to enhance the performance of demodulation. Diode-connected PMOS...
ESD failure of an operational amplifier in submicron CMOS technology is analyzed to locate the failure mechanism and re-design the protection structure in this paper. From the experimental results, the specifications related to the output stage with large size devices are degraded or exceed the qualified range. With the deep analysis of internal circuit of the chip, electrical measurement determines...
A video multiplexer with high isolation switch and capability of driving load as low as 75Ω is presented in this paper. The switch consists of a pair of NMOS and PMOS with the noise-shunt path to improve the isolation performance, presenting low on-resistance. The amplifier operates in closed-loop condition for signal buffering or amplification typically, whose circuit design and layout floorplan...
An input stage using Darlington configuration with a lateral PNP and a vertical PNP combination for operational amplifier (Op-Amp) is presented in this paper. The emitter degeneration resistors are added to enhance the slew rate of the amplifier. To decrease the input offset voltage, the base current traced compensation technique is used to balance and compensate the different current component between...
In this paper, a low power, high density and fully integrated CMOS receiver front-end with digital output for optical signal processing systems is presented. The circuit is composed of transimpedance amplifier for weak optical current detection, limiting amplifier for both linear and limiting amplifications, control circuits and the digital output interface. The front-end is powered by a single 3...
This paper presents a 16-bit 250ksps successive approximation register analog-to-digital converter (SAR-ADC) based on the charge-redistribution technique. The ADC contains a charge-redistribution DAC, a high precision internal voltage reference, a low offset comparator and a serial data interface. The split capacitor array was used to save the area of the chip and improve the speed and accuracy of...
In this paper, a monolithic signal conditioner for inductive proximity sensors (IPSs) is presented. It's based on the principle that change in inductance current slew rate at a constant voltage is related to inductance. Through detection of current slew rate slope di/dt, inductance can be detected. This method allows long distance between the conditioner circuits and the proximity sensor, which expands...
In this paper, a 4-channel photocurrent detector is described which is used in the field of photoelectric detection. Each channel of the detector consists of TIAs and voltage comparator, and current detection threshold can be set by external voltage. The TIA has measured 1.5mA input current overload capacity and 1.9 nArms equivalent input noise current level. The detector is processed in 2 um all-NPN...
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