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Through silicon vias (TSV) are the enablingcomponents in the emerging 2.5D and 3D integrationmicroelectronic packaging. The insulation layer, i.e. the liner, plays the key role in determining the performance of TSV. Polymer liner are receiving a growing attention for its moresuitable properties and simpler processing compared to thetradition silicon dioxide (SiO2) liner. Recently we reported anovel...
Through silicon vias are key components in 2.5D and 3D microelectronic packaging. Deep silicon etching is the critical step in fabrications of TSVs. Uniform metal-assisted chemical etching (MaCE) has been considered as a promising method to the conventional deep reaction ion etching for deep silicon etching. In this paper, we demonstrated that the uniform MaCE method is capable of fabricating vertical...
This paper reports a novel wet chemical etching method, referred to as uniform metal-assisted chemical etching (MaCE), for uniform hole formation in fabrication of through silicon vias (TSVs) on silicon (Si) interposer in wafer level. In MaCE, a layer of Au as catalyst is deposited on the photolithography-patterned Si surface. Uniform holes are formed by simply immersing the Au-loaded Si into a hydrofluoric...
Trenches on silicon have found important applications in microelectromechanic system, microfluidic devices, photonic devices, capacitor memory devices and etc. Etching trenches with controllability of 3D geometry receives growing interests from academia as well as industry. In this paper we introduce a novel wet etching method, named metal assisted chemical etching, as a promising trench etching technology...
In this paper, a novel wet etching method, named metal-assisted chemical etching (MaCE), is applied for through silicon vias (TSVs) fabrications. The influence of key experimental parameters in MaCE, including catalyst, etchant and dimension of TSVs are discussed. Especially, the type, geometry and morphology of catalyst are varied and the results are compared. A high etching rate over 10 μm/min and...
This paper explores silicon nanowire technology for ultrathin high-density capacitors, supercapacitors and batteries. Development of such thin power components on glass or silicon will allow integration with other passive components as well as actives such as decoupling capacitors close to locic Ics to form 3D integrated passive and active devices (3D IPACs) that could then be surface-assembled onto...
A low cost etching method, metal-assisted chemical etching (MaCE), was used to successfully etching 30 μm-diameter silicon vias (SVs), of which the quality are comparable to those fabricated by deep reactive ion etching (DRIE) method. A novel carbon nanomaterial filling method was developed based on chemical vapor deposition (CVD) technique. The influence of preparation of CVD catalyst on the quality...
Metal assisted chemical etching (MaCE) is a promising technology for next-generation micro- and nano-semiconductor fabrication. In this technology, noble metals are used as catalyst to anisotropically etch bulk materials in solution. Here we report the first silicon vias with sub-100 nm diameter etched by MaCE. The distinct structure of thus fabricated vias enables the successful copper filling from...
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