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Electrically driven CW operation of energy-efficient ultra-compact InP-based nanolasers in a Silicon photonic platform is demonstrated. The nanolaser diode is single mode and emits at 1560 nm with SMSR grater than 20dB. The threshold is low, around 0.1mA at 1 V and the emitted power in the SOI waveguide is of the order of 0.1mW giving a wall-plug efficiency higher than 10 percents.
Fabrication of high Q-factor InP-based Photonic Crystal nanobeam cavities is demonstrated by improving ICP etching. We measure Q-factors as high as ~130,000 for passive cavities by integrating them on to SOI wire waveguides. Nanolasers exhibiting low lasing threshold are then obtained using this technology.
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