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A multiscale approach to modeling of accumulation of radiation defects in silicon alpha detectors applied in the associated particle imaging systems is developed. The approach includes: calculation of primary knock-on atoms energy distribution, calculation of number of primary defects per one alpha particle, solution of system of kinetic equations for concentrations of all secondary defects, and calculation...
A multiscale approach to modeling of accumulation of radiation defects in silicon alpha detectors applied in the associated particle imaging systems is developed. With this approach we calculated the dependencies of defect concentrations and leakage current on time in a detector which was irradiated by alpha particles with energy of 3.5 MeV.
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