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This research work investigates the ferroelectric characteristic of nanostructured ZnO/MgO bilayer based MFIM capacitor. The low leakage current (10−8 A.cm−2) of nanostructured ZnO/MgO bilayer films were observed for all annealed bilayer films. Nanostructured ZnO/MgO bilayer film annealed at 475°C was then utilized as insulator (dielectric) layer in the fabrication of MFIM capacitor due to its high...
This paper investigates the electrical properties of metal-insulator-semiconductor (MIS) by varying the thickness of the semiconductor layer. The MIS device was fabricated using ZnO and PMMA: TiO2 nanocomposite as semiconductor and dielectric layer, respectively. Different thickness of ZnO films was obtained by varying the deposition speed from 500 to 3000 rpm. The electrical properties of MIS showed...
This paper investigated the effect of dielectric thickness to the electrical properties metal-insulator-semiconductor (MIS) device. The MIS device were fabricated having PMMA:TiO2 and ZnO as dielectric and semiconductor layer, respectively. The PMMA:TiO2 nancomposite dielectric film were deposited at different deposition speed from 1000, 2000, 3000, 4000, 5000, 6000 rpm. Results showed that there...
The thin films of lead titanate (PbTiO3) have been prepared on ITO coated glass substrate by means of storage element for DC power application. The solution was prepared by modified sol-gel process that involved sonication process to ensure the uniform nanoparticulates formation before ageing stage take parts. In the need to compensate the lead loss, extra 10mol% of Pb content was added to the solution...
Magnesium oxide and bilayer ZnO/MgO dielectrics film were successfully deposited using spin coating technique. The effect of MgO layer thickness towards prepared dielectric films behaviour was determined by controlling the deposition time. The comparison of the MgO and ZnO/MgO dielectrics film properties shows that the bilayer ZnO/MgO with 238nm MgO layer thickness shows better dielectrics properties...
In this paper we study the hysteresis in metal-insulator-semiconductor (MIS) devices fabricated with nanocomposite poly (methyl methacrylate): titanium dioxide (PMMA:TiO2) on n-tyse Si as dielectric and semiconductor layers, respectively. The capacitance-voltage (C-V) and current-voltage (I-V) characteristic of MIS were studied as a function of different frequency varied at 10 kHz until 10 MHz. C-V...
Magnesium oxide thin films have been deposited on glass substrate using simple chemical solution technique. Film thickness was varied (171, 238, and 506nm) by controlling the deposition time. The electrical behaviour of MgO films showed leakage current density below 10 -7 A/cm 2 for voltage range from -10V to 10V. Resistivity value of the film was found to be increased due to the large...
This study investigates the effect of varying loading percentage of MgO on the dielectric constant of Poly (vinylideneflouride)/Magnesium Oxide (PVDF/MgO) nanocomposite thin films. PVDF/MgO nanocomposite spin coated thin films were successfully fabricated and characterized. PVDF and nanocomposites solutions with loading percentage of MgO at 3, 5, 7, 9, and 11% were spin coated on Al-glass substrates...
The electrical, dielectric and structural properties of multilayer ZnO/MgO films prepared by simple chemical deposition technique were investigated using I-V measurement, impedance spectroscopy analyzer and field emission scanning electron microscope (FESEM). From the observation, it shows that the annealing temperature influence the electrical, dielectric and structural properties of ZnO/MgO multilayer...
The morphology of PVDF-TrFE (70/30) thin film at various annealing temperature were investigated using non-contact mode Atomic Force Microscopy (AFM). Differential Scanning Calorimetry (DSC) technique was used to obtain TC, Tm, and TCrys of PVDF-TrFE. The prepared spin coated PVDF-TrFE (70/30) thin films were annealed at TC (113°C), Tm (154°C), TCrys (135°C) and Tc at cooling (55°C) in accordance...
This research is to investigate the dielectric properties of PMMA: TiO2 nanocomposite thin films. The experiments are conducted by varying the TiO2 concentration from 0wt%, 1wt%, 2wt%, 3wt%. The results indicate that dielectric properties of PMMA: TiO2 nanocomposite thin film is affected by the amount of TiO2 concentration added into PMMA solution. The thin film with 3wt% indicate the higher dielectric...
Physical properties such as high melting point, low heat capacity and high bonding strength of magnesium oxide, MgO could be get give an advantage to MgO to be used as the dielectric layer. Besides that, MgO also has large band gap (7.8 eV) and high dielectric constant (9.8) could be potentially used as a buffer layer for ferroelectric material. In this work, MgO with 0.2M concentration were prepared...
Poly (methy-methacrylate) (PMMA) thin films were deposited by sol-gel spin coating method on glass substrates. PMMA powder was dissolved in 60ml Toluene with the concentration of the PMMA in the solution was varied from 30 ∼ 120 mg. Besides the PMMA concentration, we also studied the effect of the thin films thickness on the electrical properties. The results for electrical properties showed that...
In this work, we report on the effects of drying temperature on the electrical and structural properties of MgO thin films. The MgO thin films have been prepared on glass substrates using sol-gel spin coating method. The thin films dried at four different temperatures were then subjected to electrical and structural characterizations using two point probes solar simulator (BUKOH KEIKI-EP2000), impedance/gain...
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