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This paper investigates the electrical properties of metal-insulator-semiconductor (MIS) by varying the thickness of the semiconductor layer. The MIS device was fabricated using ZnO and PMMA: TiO2 nanocomposite as semiconductor and dielectric layer, respectively. Different thickness of ZnO films was obtained by varying the deposition speed from 500 to 3000 rpm. The electrical properties of MIS showed...
This paper investigated the effect of dielectric thickness to the electrical properties metal-insulator-semiconductor (MIS) device. The MIS device were fabricated having PMMA:TiO2 and ZnO as dielectric and semiconductor layer, respectively. The PMMA:TiO2 nancomposite dielectric film were deposited at different deposition speed from 1000, 2000, 3000, 4000, 5000, 6000 rpm. Results showed that there...
In this paper we study the hysteresis in metal-insulator-semiconductor (MIS) devices fabricated with nanocomposite poly (methyl methacrylate): titanium dioxide (PMMA:TiO2) on n-tyse Si as dielectric and semiconductor layers, respectively. The capacitance-voltage (C-V) and current-voltage (I-V) characteristic of MIS were studied as a function of different frequency varied at 10 kHz until 10 MHz. C-V...
Preparation of nanohybrid PMMA/TiO2 hybrid was reported by using sol-gel spin-coating method. This studied involve modification optical band gap energy of TiO2 at different molar concentration of TTIB precursor. Field emission scanning electron microscope (FESEM) results showed TiO2 particles encapsulate surroundings big size of PMMA particles. This existence of board particles have been confirmed...
In this study, TiO2 nanowires with diameter of 20–23 nm was successfully synthesized using treatment of TiO2 nanoparticle with concentrated sodium hydroxide at 150 °C for 6 hours. The dielectric properties of bulk TiO2 nanoparticle, anatase TiO2 nanowires (annealed at 500 °C) and rutile TiO2 (annealed at 900 °C) was investigated. The crystallographic phase of TiO2 was determined using X-ray diffraction...
Titanium Dioxide (TiO2) thin film has been synthesized using sol-gel method and deposited onto glass substrates using spin coating technique. These thin films are then annealed at various temperatures. The electrical and structural characterizations of the as deposited and annealed films were carried out using IV measurement with 4-point probe equipment and scanning electron microscopy (SEM). From...
Titanium dioxide in the anatase phase has been synthesized by the sol-gel method. Then, the solution was deposited onto glass substrate using spin coating technique. These thin films are then annealed at a temperature ranged from 350°C to 550°C. The optical and topology of the thin film was characterized using UV-VIS and AFM. Based on the readings from UV-VIS spectroscopy, it is found that transmittance...
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