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The multigated architecture of FinFETs appear attractive for continued CMOS scaling with the addition of discrete fin sizing that brings a new variable into the design. In this paper, a comprehensive 3-D simulation on 14/16-nm advanced-process FinFET under geometric and process considerations was presented in order to achieve the best possible performance with minimal penalty. Geometric designs, specifically...
Leakages and short channel effects (SCE) impose challenges in the designing of CMOS devices as the device feature size enters the nanoscale regime. Advanced process design of CMOS devices are crucial in countering the limitations impose by SCE. This paper investigates the advantages of implementing the halo process into the design of the submicron-CMOS devices. Critical device performance merits and...
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