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Wide bandgap devices are enabling high-efficiency operation for 6.78 MHz highly resonant wireless power applications based on the AirFuel standard. Wireless power systems need to move beyond charging pads and become considered power sources. To do this they need to support a larger area such as an office desk and increase their power capability. This demands fundamental changes in coil technology...
Here, we present the use of Gallium Nitride (GaN) FETs as a replacement for PIN diodes in active detuning circuits for magnetic resonance imaging (MRI) receive coils at 63.6 MHz. We use simulated circuit models, benchtop measurements, and imaging experiments to show that GaN FETs perform comparably with a common MRI-compatible PIN diode. The GaN FET-based circuits require orders of magnitude less...
The proliferation of wireless power products for mobile applications is leading to consumer confusion and hindering adoption of this technology. A simple eGaN® FET based single amplifier topology capable of operating to all of the mobile device wireless power standards is presented. The high reliability of eGaN FETs further make this solution suitable for automotive applications. This paper presents...
The popularity of highly resonant, loosely coupled, wireless energy transfer systems operating at 6.78 MHz has increased dramatically over the last few years. In this paper we present the zero voltage switching (ZVS) voltage mode class D amplifier topology and evaluate its performance as a suitable A4WP Class-3 compliant amplifier using eGaN FETs and compare the performance with MOSFETs. Experimental...
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