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Performance and reliability of wide bandgap high-power amplifiers are correlated with their thermal behavior. Thermal model development and suitable temperature measurement systems are necessary to quantify the channel temperature of devices in real operating conditions. As a direct temperature measurement within a channel is most of the time not achievable, the common approach is to measure the device...
Performance and reliability of a high power amplifier are correlated with its thermal behavior. Thermal model development and suitable temperature measurement systems are necessary to quantify the channel temperature of devices in real operating conditions. In this paper, temperature measurements applying X-band RF dynamic signal are presented. Infrared microscopy and Raman spectroscopy performed...
Precise temperature knowledge is a key parameter to estimate the performances and predict the reliability of semiconductor devices. As a direct temperature measurement within a channel is most of the time not achievable, a common approach is to measure the device surface temperature and then to use simulations to estimate the channel temperature. In this paper, we propose to evaluate the interests...
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