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An advanced TSV metallization scheme, featuring a high conformal ALD oxide liner, a thermal ALD WN barrier, an electroless NiB platable seed and a high throughput copper ECD filling is presented. Because of the high conformality of the WN barrier and NiB seed, very thin layers can be deposited, reducing the manufacturing cost significantly, while still guaranteeing continuous barrier/seed layers all...
The influence of via density on the mechanical integrity of Back-End-Of-Line (BEOL) interconnects under Chip Package Interaction (CPI) loading is evaluated using a dedicated package test chip with 4 metal layers, and different via densities interconnecting the first 3 metal layers where the bottom two metal layers employ advanced low-k materials with k = 2.4 and have a low-k/metal ratio density of...
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