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Conventional Variable Frequency Drive (VFD) method for induction motor consists of nonlinear loads such as rectifier and inverter (AC-DC-AC). These nonlinear devices are the biggest cause of harmonics generation on power lines. In proposed system, passive LC filters are used to control the harmonic currents present on power lines. DSP-based variable frequency drive is designed using DSP TMS320LF2407Aoffers...
Any design in VLSI is considered, in terms of area, Speed and Power. The factors interrelated with the above three major factors are Delay, Placement, & Skew. Out of these Delay and Skew are the main timing constraints which have to be considered in VLSI design. Power is a main factor because, an increase in it increases cost in terms of heat sink and hardware required for cooling. In VLSI Flip...
Today, it is necessary to increase the speed of multiplier as the need of high speed processors is increasing. Multiplier is a main block of any processor. Conventional processors need great hardware resources and take more time in multiplication operation. This paper present a high speed multiplier based on ancient popular Vedic Mathematics. Implementation is done on digital circuits. Vedic multiplication...
The Voltage controlled oscillators (VCO) are the useful and important component in data communication systems and must needed in applications like a modulation, demodulation and clock generator circuits. This paper focused on design of different voltage control oscillator (VCO) topology as basic, output switching, power switching, current mirror and symmetrical load with stability of oscillation frequency...
SRAM area is about to exceed 90% of overall chip area to satisfy the increased chip functionality demand. Smaller transistor dimensions increases chip density. At these nano technology nodes variation in Process, voltage, and Temperature (PVT) affects the stability of SRAM cell. This paper investigates six transistors (6T) SRAM stability in hold/standby, read, and write mode design consider SOI MOSFET...
The rapid technology developments in the metal-oxide-semiconductor industry have lead to CMOS scaling down to the sub-20nm regime, and according to the 2009 ITRS projections printed gate lengths will scale down to approximately 12nm by 2020, resulting in significant changes in both the information processing technology as well as the device manufacturing technology. The most promising devices now...
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