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We generate large effective χ(2) nonlinearities in a purely χ(3)-nonlinear Si3N4 microringresonator using the coherent photon conversion scheme and measure a normalized effective second harmonic generation efficiency above 77%/mW.
Electrical tunability of the optical nonlinearity of graphene is demonstrated on a SiN platform using four-wave mixing. The nonlinearity γ of the graphene-covered waveguide more than doubles when tuning EF to the vicinity of −ħω/2.
We report on the atomic layer deposition of ZnO for interfacing with existing Si3N4 photonics which lacks 2nd-order nonlinear functionalities. We measure a χ(2) of 15 pm/V in line with a bulk ZnO crystal.
The high index contrast silicon-on-insulator platform is the dominant CMOS compatible platform for photonic integration. The successful use of silicon photonic chips in optical communication applications has now paved the way for new areas where photonic chips can be applied. It is already emerging as a competing technology for sensing and spectroscopic applications. This increasing range of applications...
We propose a new scheme based on frequency multiplexing to deterministically generate single photons. We experimentally demonstrate the feasibility of multiplexing 2 frequency channels without additional multi-photon noise and losses in the generated photons.
Silicon photonics typically builds on a silicon-on-insulator based high-index-contrast waveguide system. Silicon nitride provides an alternative moderate-index-contrast system that is manufacturable in the same CMOS environment. This paper discusses the relative benefits of both platforms.
We review possible implementations of coherent anti-Stokes Raman scattering using nanophotonic waveguide circuits. Enhancement mechanisms and limitations are discussed.
We demonstrate a Ramsey interferometer for single photons via consecutive quantum frequency conversions where the phase depends on the propagation between the two interaction regions. Such an interferometer offers control over frequency encoded quantum states.
Using high-Q Si3N4 microresonators, we generate the narrowest bandwidth (40 MHz) photon pairs, yet achieved for a chip-based source. Its high intrinsic stability and broad tunability are highly promising for interfacing to quantum memory networks.
The generation of an octave spanning supercontinuum covering most of the visible spectrum is demonstrated for the first time in a Si3N4 waveguide. This result is achieved by dispersion engineering through partially underetching a waveguide.
We demonstrate quantum frequency translation of single photons via four-wave-mixing Bragg scattering using a liquid nitrogen cooled dispersion-shifted fiber. We achieve 80% photon conversion efficiency with less than 0.001 noise photons per 5ns gate.
We demonstrate high optical depths of > 50 lasting over 100 minutes in a Rubidium filled PBGF using an off-resonant CW laser beam, which enables straightforward measurement of cross-phase modulation at the single photon level.
We demonstrate frequency translation of a weak signal beam with 21% efficiency in Rb vapor confined to a hollow core photonic band-gap fiber via Bragg scattering by four-wave mixing using microwatt level pump beams.
We demonstrate a photonic Ramsey interferometer using four-wave mixing in which the photon energies are analogous to atomic/molecular levels. This technique is highly promising for frequency-based quantum key distribution.
We report the first demonstration of all-optical continuously tunable delay imparted on single photons using a frequency conversion-dispersion technique. Delays tunable over 23 times the photon duration are demonstrated with on/off efficiency of 20–55%.
We present a technique for performing single-shot optical cross-correlations in a silicon waveguide and show that it can be applied to the cross correlation of two 300-fs signals.
Silicon nanowires have an immense potential for nonlinear optical functions. Recent work on four-wave-mixing gain in hydrogenated amorphous silicon wires at telecom wavelengths and in crystalline silicon wires in the 2μm wavelength range is reviewed.
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