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We present the field-effect-transistor-based THz (TeraFET) detector as a tool for monitoring power and its low-frequency fluctuations of 4.75-THz quantum cascade laser (QCL). The resonant patch antenna coupled TeraFET was implemented in 90 nm CMOS technology. At 4.75 THz, detector exhibits area-normalized minimal noise-equivalent power (NEP) of 370 pW/√Hz and the maximum responsivity of 82 V/W.
We discuss the modelling, implementation and characterization of antenna-coupled field-effect transistor detectors for THz frequencies. Detectors have been fabricated using a commercial 65-nm CMOS foundry process. At 4.1 THz resonance frequency and optimum operation conditions a responsivity of 86 V/W and noise-equivalent power of 113 pW/√Hz has been measured.
We present a 24 × 24 pixel camera capable of high-speed THz imaging in power-detection mode. Each pixel of the sensor array consists of a pair of 150-nm NMOS transistors coupled to a patch antenna with resonance at 600 GHz. The camera can operate with a speed of up to 450 frames per second where it exhibits a minimum resolvable power of 10.5 nW per pixel. For a 30-Hz frame rate, the minimum resolvable...
We report on developments of the camera for 590 GHz radiation which has been stitched from four 12×12 antenna-coupled field-effect transistor detector (TeraFET) arrays and supplemented with parallelized low noise read-out electronics. In the current state, the read-out speed of 740 frames-per-second (fps) for a 12×12 element segment has been achieved. It is anticipated that in the final state the...
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