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A continuous 2-D analytical drain current model of double-gate (DG) heterojunction tunnel field-effect transistors (HJTFETs) with a SiO2/HfO2 stacked gate-oxide structures has been presented in this paper. The surface potential model has been developed by considering the effect of accumulation/inversion charges and depletion region at source/channel and drain/channel junctions. The electric field-dependent...
This work presents the comparative study of three different heterojunction SOI-TFET architectures: conventional SOI-TFET, gate overlapped on source SOI-TFET and oxide overlapped on source SOI-TFET. Gate oxide overlapped on source SOI-TFET reported significant improvement in ON current (18µ A/µm) and Ion/Ioff ratio (1010). In addition to significantly low average subthreshold swing (22 mV / dec), the...
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